Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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12 results for Roy E. Scheuerlein

A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell
- - R. Scheuerlein
  - W.J. Gallagher
  - et al.
- 2000
- ISSCC 2000
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
- - N.C.-C. Lu
  - P.E. Cottrell
  - et al.
- 1984
- IEDM 1984
Magnetization Reversal in Micron-Sized Magnetic Thin Films
- - R.H. Koch
  - J.G. Deak
  - et al.
- 1998
- Physical Review Letters
Magneto-resistive IC memory limitations and architecture implications
- - R. Scheuerlein
- 1998
- INVMTC 1998
Experimental 27 ns 1 Mb CMOS high-speed DRAM
- - S. Dhong
  - W.H. Henkels
  - et al.
- 1989
- VLSI Circuits 1989
Memories of tomorrow
- - William Reohr
  - Heinz Hönigschmid
  - et al.
- 2002
- IEEE Circuits and Devices Magazine
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
- - S.S.P. Parkin
  - K.P. Roche
  - et al.
- 1999
- Journal of Applied Physics
A Large V_DSData Retention Test Pattern for DRAM’s
- - R.L. Franch
  - S. Dhong
  - et al.
- 1992
- IEEE Journal of Solid-State Circuits
A Pulsed Sensing Scheme with a Limited BitLine Swing
- - R. Scheuerlein
  - Y. Katayama
  - et al.
- 1992
- IEEE Journal of Solid-State Circuits
A 14-ns 4-Mb CMOS DRAM with 300-mW Active Power
- - Toshiaki Kirihata
  - Sang H. Dhong
  - et al.
- 1992
- IEEE Journal of Solid-State Circuits