John Barth, William Reohr, et al.
ISSCC 2007
A 4-Mb high-speed DRAM (HSDRAM) has been developed and fabricated by using 0.7-μm L CMOS technology with PMOS arrays inside n-type wells and p-type substrate plate trench cells. The 13.18 × 6.38-mm2 chip, organized as either 512K word × 8 b or 1M word × 4 b, achieves a nominal random-access time of 14 ns and a nominal column-access time of 7 ns, with a 3.6-V Vand provision of address multiplexing. The high level of performance is achieved by using a shortsignal-path architecture with center bonding pads and a pulsed sensing scheme with a limited bit-line swing. A fast word-line boosting scheme and a two-stage word-line delay monitor provide fast word-line transition and detection. A new data output circuit, which interfaces a 3.6-V Vto a 5-V bus with an NMOS-only driver, also contributes to the fast access speed by means of a preconditioning scheme and a boosting scheme. Limiting the bit-line voltage swing for bit-line sensing results in a low power dissipation of 300 mW for a 60-ns cycle time. © 1992 IEEE
John Barth, William Reohr, et al.
ISSCC 2007
Yohji Watanabe, Hing Wong, et al.
IEICE Transactions on Electronics
Osamu Takahashi, Scott Cottier, et al.
IEEE Micro
Toshiaki Kirihata, Sang H. Dhong, et al.
IEEE Journal of Solid-State Circuits