Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Recently, silicon trenches have been widely used for device isolation or three-dimensional capacitors in dynamic memories. In this work, trenches with submicron openings have been fabricated and several structure-dependent effects were discovered. A reactive ion etching rate in the vertical direction inside a trench decreases significantly as the aspect ratio (depth/width) becomes larger. A bottle-shaped profile due to undercutting starts to appear with trenches whose openings are smaller than a micrometer and becomes worse as the width decreases. A film thickness on sidewalls for refilling trenches shows no strong dependence on the structural aspect when chemically vapor deposited at low pressure. © 1985, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983