A 10ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

Abstract

The magnetic tunnel junction (MTJ) magnetic random access memory (MRAM) offers an alternative approach to non-volatile VLSI memory. It achieves four times better bandwidth for sensing power ratio by utilizing a high magnetoresistance and high resistance MTJ and including a FET switch in each cell. The MTJ MRAM array has 10ns performance integrated with conventional CMOS logic devices, read and write random access and non-volatility. It uses robust static sensing and is suitable for low-voltage supplies.