H. Schwenk, S.S.P. Parkin, et al.
Physical Review Letters
The magnetic tunnel junction (MTJ) magnetic random access memory (MRAM) offers an alternative approach to non-volatile VLSI memory. It achieves four times better bandwidth for sensing power ratio by utilizing a high magnetoresistance and high resistance MTJ and including a FET switch in each cell. The MTJ MRAM array has 10ns performance integrated with conventional CMOS logic devices, read and write random access and non-volatility. It uses robust static sensing and is suitable for low-voltage supplies.
H. Schwenk, S.S.P. Parkin, et al.
Physical Review Letters
T.C. Huang, V.Y. Lee, et al.
Materials Research Bulletin
U. Rödiger, J. Yu, et al.
Physical Review B - CMMP
Y. Wu, S.S.P. Parkin, et al.
Applied Physics Letters