O. Takahashi, S. Dhong, et al.
VLSI-TSA 2001
This paper describes a test pattern for testing DRAM cell data retention that differs from conventional retention time tests. The test pattern is applicable to non-VDD bitline precharge designs, and is specifically designed to test for worst-case subthreshold leakage through the cell access device by holding bit lines in their latched position for extended periods. This action stresses the cell access devices with the worst-case VDSacross them. The reasons to perform this test on a DRAM are reviewed, its advantages over standard retention time tests are described, and its ability to differentiate access device leakage from isolation leakage is discussed. Measured results on a 1-Mb chip are shown, illustrating the test pattern’s effectiveness in screening subthreshold leakage. © 1992 IEEE
O. Takahashi, S. Dhong, et al.
VLSI-TSA 2001
Hyun J. Shin, P.F. Lu, et al.
ISSCC 1993
S. Dhong, W.H. Henkels, et al.
VLSI Circuits 1989
Keith A. Jenkins, R.L. Franch
IEEE International SOI Conference 2003