Publications

307 results at IEEE Electron Device Letters

SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing
- - P.W. Li
  - E.S. Yang
  - et al.
- 1994
- IEEE Electron Device Letters
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- - Y. Mii
  - S. Rishton
  - et al.
- 1994
- IEEE Electron Device Letters
Transistor Performance and Electron Transport Properties of High Performance InAs Quantum-Well FET's
- - John K. Zahurak
  - Stephen A. Rishton
  - et al.
- 1994
- IEEE Electron Device Letters
Experimental 0.1-um p-Channel MOSFET with p⁺-Polysilicon Gate on 35-A Gate Oxide
- - Yuan Taur
  - S. Cohen
  - et al.
- 1993
- IEEE Electron Device Letters
A New Damascene Structure for Submicrometer Interconnect Wiring
- - Rajiv V. Joshi
- 1993
- IEEE Electron Device Letters
High-Performance Devices for a 0.15-μm CMOS Technology
- - G. Shahidi
  - James Warnock
  - et al.
- 1993
- IEEE Electron Device Letters
Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's
- - G. Shahidi
  - Bijan Davari
  - et al.
- 1993
- IEEE Electron Device Letters
On the Effects of Hydrogen in p-n-p Transistors under Forward Current Stress in a C-BiCMOS Technology
- - J.Y.C. Sun
  - Maw-Rong Chin
- 1993
- IEEE Electron Device Letters
Optimized Silicon-Rich Oxide (SRO) Deposition Process for 5-V-Only Flash EEPROM Applications
- - Leonello Dori
  - Alexandre Acovic
  - et al.
- 1993
- IEEE Electron Device Letters
Extension of Impact-Ionization Multiplication Coefficient Measurements to High Electric Fields in Advanced Si BJT’s
- - Enrico Zanoni
  - Emmanuel F. Crabbé
  - et al.
- 1993
- IEEE Electron Device Letters