Indium Channel Implant for Improved Short-Channel Behavior of Submicrometer NMOSFET's

Abstract

Indium has been used as an alternative channel implant in submicrometer channel Si MOSFET's, in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to L = 0.17-μm channel length. The device characteristics have been compared to uniform boron-implanted short-channel MOSFET's used in a 0.25-μm CMOS technology. Results indicate that nMOSFET's with nonuniform channel doping obtained by indium have superior short-channel effect (SCE) when compared to nMOSFET's with uniformly (boron) doped channel. © 1993 IEEE