S.J. Wind, U. Meirav, et al.
Microelectronic Engineering
Paper
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
Abstract
Very high-transconductance 0.1-um surface-channel opMOSFET devices are fabricated with p+-poly gate on 35-A-thick gate oxide. A 600-A-deep p + source-drain extension is used with self-aligned TiSi2to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices. © 1993 IEEE
Related
P. Santhanam, C.C. Chi, et al.
Physical Review Letters
Conference paper
Very high performance 50 nm CMOS at low temperature
S.J. Wind, L.T. Shi, et al.
IEDM 1999
Clement Wann, Fariborz Assaderaghi, et al.
IEEE Electron Device Letters