Q.Y. Ma, E.S. Yang, et al.
Applied Physics Letters
A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained. ©1994 IEEE
Q.Y. Ma, E.S. Yang, et al.
Applied Physics Letters
P.S. Ho, M. Liehr, et al.
Surface Science
Ulf Gennser, V.P. Kesan, et al.
Applied Physics Letters
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics