The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide

Abstract

Boron doping additions in polysilicon-WSi2 bilayers tend to segregate preferentially in the silicide layer during heat treatments at temperatures between 600 and 1000°C. This is in contrast to arsenic impurities which under the same conditions diffuse through the silicide and evaporate. The boron analyses were obtained by means of the 10B(n, α) 7Li reaction with thermal neutrons. The arsenic analyses were obtained by means of Rutherford backscattering. The results are compared with results previously obtained from similar samples doped with phosphorous.