Manufacturing technology and the role of manufacturing research
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987
Ion-implantation damage has been studied in thin reeds of silicon by resonant-frequency and internal-friction measurements. For a dose of 10 16/cm2 of 28Si+, the principal effects are the appearance of an internal-friction peak and a decrease in the flexural vibration frequencies. The amorphous surface layer produced by implantation is deduced to have a Young's modulus of 1.24×1012 dyn/cm2 and a density of 0.95 of the crystal density. The internal stress in the amorphous layer has been measured and found to be far smaller than that corresponding to a purely elastic accommodation of the density change. © 1972 The American Institute of Physics.
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987
B.L. Crowder, R.S. Title
Radiation Effects
B.L. Crowder
ISMSS 1989
B.S. Berry, W.C. Pritchet
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films