Elastic and anelastic behavior of ion-implanted silicon

Abstract

Ion-implantation damage has been studied in thin reeds of silicon by resonant-frequency and internal-friction measurements. For a dose of 10 16/cm2 of 28Si+, the principal effects are the appearance of an internal-friction peak and a decrease in the flexural vibration frequencies. The amorphous surface layer produced by implantation is deduced to have a Young's modulus of 1.24×1012 dyn/cm2 and a density of 0.95 of the crystal density. The internal stress in the amorphous layer has been measured and found to be far smaller than that corresponding to a purely elastic accommodation of the density change. © 1972 The American Institute of Physics.