J. De Sousa Pires, P. Ali, et al.
Applied Physics Letters
Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260-300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C. © 1969 The American Institute of Physics.
J. De Sousa Pires, P. Ali, et al.
Applied Physics Letters
F. Jahnel, J.P. Biersack, et al.
Journal of Applied Physics
J.C. Tsang, M.W. Shafer, et al.
Physical Review B
K.N. Tu, P. Chaudhari, et al.
Journal of Applied Physics