Electrical Properties of Al/Ti Contact Metallurgy for VLSI Application
- C.-Y. Ting
- B.L. Crowder
- 2019
- JES
Publications
Date
Featured collections
Popular topics
37 results for Billy L. Crowder
One-Micron Polycide (WSI2 on Poly-Si) MOSFET Technology
- M.Y. Tsai
- H.H. Chao
- et al.
- 2019
- JES
Electrical Properties of AI/Ti Contact Metallurgy for VLSI Applications
- C.-Y. Ting
- B.L. Crowder
- 2019
- JES
Measurements of the rectifying barrier heights of the various iridium silicides with n-Si
- J. De Sousa Pires
- P. Ali
- et al.
- 2008
- Applied Physics Letters
Radiochemical determination of damage profiles in silicon
- B.J. Masters
- J.M. Fairfield
- et al.
- 2006
- Radiation Effects
Model for the formation of amorphous Si by ion bombardment
- F.F. Morehead
- B.L. Crowder
- 2006
- Radiation Effects
Distribution of damage produced by ion implantation of silicon at room temperature
- B.L. Crowder
- R.S. Title
- 2006
- Radiation Effects
Efficient injection electroluminescence in znte by avalanche breakdown
- B.L. Crowder
- F.F. Morehead
- et al.
- 2004
- Applied Physics Letters
Effect of O+ and Ne+ implantation on the surface characteristics of thermally oxidized Si
- N.J. Chou
- B.L. Crowder
- 2003
- Journal of Applied Physics
Formation of amorphous silicon by ion bombardment as a function of ion, temperature, and dose
- F.F. Morehead
- B.L. Crowder
- et al.
- 2003
- Journal of Applied Physics