Conference paper
Manufacturing technology and the role of manufacturing research
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.
Albert J. Blodgett, B.L. Crowder
International Electronic Manufacturing Technology Symposium 1987
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Applied Physics Letters
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Applied Physics Letters
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