Design and manufacturability aspect of SOI CMOS RFICs

Abstract

The design and manufacturability of silicon on insulator (SOI) RF integrated circuits, from SOI technology understanding to the integration of high-performance passive devices for a wireless system-on-chip (SoC) application were presented. The potential of the SOI technology through the process regime, the device performance and the circuit level was also investigated. It was observed that the ability of SOI NMOS transistors to function as high-bandwidth amplifiers continuously improved as the gate length shrinked below 50nm. It was also observed for the first time that high-performance manufacturable RF circuits could be integrated in a standard SOI CMOS technology.