IVB-4 Probing the Minority-Carrier Quasi-Fermi Level in Epitaxial Schottky-Barrier DiodesL.F. Wagner1984IEEE T-ED
Modulation-Doped GaAs/AlGaAs Heterojunction Field-Effect Transistors (MODFET's), Ultrahigh-Speed Device for SupercomputersPaul M. SolomonHadis Morkoç1984IEEE T-ED
Generalized Scaling Theory and Its Application to a 1/4 micrometer MOSFET DesignRobert H. DennardMatthew R. Wordeman1984IEEE T-ED
Accuracy of an Effective Channel Length/External Resistance Extraction Algorithm for MOSFET'sSteven E. Laux1984IEEE T-ED
Temperature Dependence of FET Properties for Cr-Doped and LEC Semi-Insulating GaAs SubstratesThomas W. Hickmott1984IEEE T-ED
Nonuniform Displacement of MOSFET Channel PinchoffSavvas G. ChamberlainAsim Husainet al.1984IEEE T-ED
The Phase-Shifting Mask II: Imaging Simulations and Submicrometer Resist ExposuresMarc D. LevensonScott Lindseyet al.1984IEEE T-ED