PaperIIIB-2 Channel Length Characterization of LDD MOSFET's-Jack Y. C. Sun, Matthew R. Wordeman, et al.IEEE T-ED
Conference paperA 34&181;m2DRAM cell fabricated with a 1&181;m single-level polycide FET technologyHu H. Chao, Robert H. Dermard, et al.ISSCC 1981
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