PaperA Fully Scaled Submicrometer NMOS Technology Using Direct-Write E-Beam LithographyMatthew R. Wordeman, April M. Schweighart, et al.IEEE T-ED
Conference paperMonte-Carlo simulations of performance scaling in strained-Si nMOSFETsArvind Kumar, Massimo V. Fischetti, et al.SISPAD 2005
PaperChannel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructureArvind Kumar, Steven E. Laux, et al.Applied Physics Letters
PaperA General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor TransportSteven E. Laux, Bertrand M. GrossmanIEEE T-ED
