ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.
- T.O. Sedgwick
- S. Cohen
- et al.
- 1983
- ECS Meeting 1983
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22 results at ECS Meeting 1983
TEMPERATURE DEPENDENT RESISTIVITY OF THIN FILMS OF NITRIDES OF Zr AND Hf; EFFECT OF NITROGEN CONTENT.
- L. Krusin-Elbaum
- 1983
- ECS Meeting 1983
STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF//4/H//2 REACTIVE ION ETCHING.
- G.S. Oehrlein
- R.M. Tromp
- et al.
- 1983
- ECS Meeting 1983
STRUCTURAL CHARACTERISTICS OF CHEMISORBED LEAD ON SINGLE CRYSTAL COPPER SURFACES.
- D.L. Rath
- Dieter M. Kolb
- et al.
- 1983
- ECS Meeting 1983
HEATING EFFECT IN HIGHLY CONDUCTING MATERIALS DURING PLASMA ETCHING.
- Y.H. Lee
- M. Chen
- 1983
- ECS Meeting 1983
EFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.
- T.H. Ning
- 1983
- ECS Meeting 1983
TEM STUDY OF THE EFFECT OF ACCELERATORS ON Pd-Sn COLLOIDAL CATALYSTS AND ON THE INITIATION OF ELECTROLESS Cu DEPOSITION ON EPOXY.
- J. Harkans
- J. Kim
- et al.
- 1983
- ECS Meeting 1983
DOPANT INCORPORATION PROCESSES IN SILICON GROWN BY MOLECULAR BEAM EPITAXY.
- Subramanian S. Iyer
- Robert A. Metzger
- et al.
- 1983
- ECS Meeting 1983
APPLICATION OF THE MIXED POTENTIAL THEORY AND THE INTERDEPENDENCE OF PARTIAL REACTIONS IN ELECTROLESS COPPER DEPOSITION.
- P. Bindra
- Allan David
- et al.
- 1983
- ECS Meeting 1983
POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Gosele
- 1983
- ECS Meeting 1983