Publication
ECS Meeting 1983
Conference paper

SHORT-TIME ANNEALING OF DRY-ETCHING DAMAGE.

Abstract

The technique of short-time annealing has recently been shown to be helpful in removing ion implanation damage with minimal movement of dopant. The possibility of a dry-etch processing damage removal using short-time annealing is evaluated in this paper using the high temperature end of the normal anneal range to optimize the chance for defect removal.

Date

Publication

ECS Meeting 1983

Authors

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