AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.

Abstract

Using RBS, the complex effects of ambience on the Ti-Si reaction are investigated. In VLSI processing the choice of the ambient gas will have to be very application dependent. The formation of layers on the surface of compounds formed by interaction of Ti and the ambient gas, that are passivating, have an important bearing on processing. It is easy to see that in any case good control of the ambient gas purity is crucial.