The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide
- F. Jahnel
- J.P. Biersack
- et al.
- 1982
- Journal of Applied Physics
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37 results for Billy L. Crowder
1 μm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part VII—Metal Silicide Interconnection Technology—A Future Perspective
- Billy L. Crowder
- Stanley Zirinsky
- 1979
- IEEE T-ED
1 µm MOSFET VLSI Technology: Part VII-Metal Silicide Interconnection Technology—A Future Perspective
- Billy L. Crowder
- Stanley Zirinsky
- 1979
- IEEE JSSC
1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
Effect of crystal damage on superconductivity in the transition-metal layer compounds
- J.C. Tsang
- M.W. Shafer
- et al.
- 1975
- Physical Review B
Raman scattering in amorphous Si, Ge and III-V semiconductors
- J.E. Smith Jr.
- M.H. Brodsky
- et al.
- 1972
- Journal of Non-Crystalline Solids
Raman spectra of amorphous Si and related tetrahedrally bonded semiconductors
- J.E. Smith Jr.
- M.H. Brodsky
- et al.
- 1971
- Physical Review Letters
The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
- Billy L. Crowder
- 1971
- JES
High-Dose Implantations of P, As, and Sb in Silicon: A Comparison of Room-Temperature Implantations Followed by a 550°C Anneal and Implantations Conducted at 600°C
- Billy L. Crowder
- John M. Fairfield
- 1970
- JES