Raman scattering in amorphous Si, Ge and III-V semiconductors

J.E. Smith Jr.; M.H. Brodsky; B.L. Crowder; M.I. Nathan

doi:10.1016/0022-3093(72)90133-0

Journal of Non-Crystalline Solids

Paper

01 Jan 1972

Raman scattering in amorphous Si, Ge and III-V semiconductors

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Abstract

A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.

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