J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Paper
Raman scattering in amorphous Si, Ge and III-V semiconductors
Abstract
A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.
Related
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
M.A. Lutz, R.M. Feenstra, et al.
Surface Science