Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
- Min Yang
- Evgeni P. Gusev
- et al.
- 2003
- IEEE Electron Device Letters
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81 results for Kevin Chan
3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay
- Basanth Jagannathan
- Mounir Meghelli
- et al.
- 2003
- IEEE Electron Device Letters
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
High mobility p-channel germanium MOSFETS with a thin Ge oxynitride gate dielectric
- Huiling Shang
- Harald Okorn-Schmidt
- et al.
- 2002
- IEDM 2002
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
- K. Rim
- E. Gusev
- et al.
- 2002
- VLSI Technology 2002
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
- K. Rim
- J.O. Chu
- et al.
- 2002
- VLSI Technology 2002
A self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature
- G.M. Cohen
- C. Cabral Jr.
- et al.
- 2002
- MRS Proceedings 2002
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
- R. Martel
- V. Derycke
- et al.
- 2001
- Physical Review Letters