Publication
VLSI Technology 2002
Conference paper
Mobility enhancement in strained Si NMOSFETs with HfO2 gate dielectrics
Abstract
Mobility enhancement in strained Si NMOSFETs was demonstrated with HfO2 gate dielectrics. The split current-voltage technique was used to measure the gate to inversion channel capacitance. Integration of strained Si and high-K dielectrics provided an improved trade-off between device performance and gate leakage. Strained Si NMOSFETs exhibited 60% higher mobility than unstrained Si device with HfO2 gate dielectrics.