Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates
- Stephen W. Bedell
- Thomas N. Adam
- et al.
- 2011
- Journal of Crystal Growth
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103 results for Stephen W. Bedell
Low-temperature growth of epitaxial (1 0 0) silicon based on silane and disilane in a 300 mm UHV/CVD cold-wall reactor
- Thomas N. Adam
- Stephen W. Bedell
- et al.
- 2010
- Journal of Crystal Growth
CMOS-integrated high-speed MSM germanium waveguide photodetector
- Solomon Assefa
- Fengnian Xia
- et al.
- 2010
- Optics Express
Activation of implanted n-type dopants in Ge over the active concentration of 1× 1020 cm-3 using coimplantation of Sb and P
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2009
- Electrochemical and Solid-State Letters
Single-crystalline Germanium thin films by electrodeposition and solid-phase epitaxy
- Q. Huang
- S.W. Bedell
- et al.
- 2007
- Electrochemical and Solid-State Letters
Study of HCl and secco defect etching for characterization of thick sSOI
- A. Abbadie
- S.W. Bedell
- et al.
- 2007
- JES
Strain and lattice engineering for Ge FET devices
- S.W. Bedell
- A. Reznicek
- et al.
- 2006
- Materials Science in Semiconductor Processing
Germanium channel MOSFETs: Opportunities and challenges
- Huiling Shang
- Martin M. Frank
- et al.
- 2006
- IBM J. Res. Dev
Defects and strain relaxation in silicon-germanium-on-insulator formed by high-temperature oxidation
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters
Observation of stacking faults in strained Si layers
- S.W. Bedell
- K.E. Fogel
- et al.
- 2004
- Applied Physics Letters