K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics
Stacking faults in strained Si layers grown on relaxed SiGe layers were observed using chemical etching and transmission electron microscopy. Defect densities were measured in strained Si layers formed on SiGe buffer layers grown on bulk Si as well as silicon-germanium-on-insulator substrates. Stacking faults were shown to exist in the relaxed SiGe alloy layer without a strained-Si capping layer. In addition to threading dislocations and dislocation pile ups, stacking faults were found to present in nearly all of the materials studied.
K.L. Saenger, K.E. Fogel, et al.
Journal of Applied Physics
K. Cheng, A. Khakifirooz, et al.
VLSI Technology 2009
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
M. Hamaguchi, H. Yin, et al.
VLSI Technology 2008