Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
- S.J. Koester
- K.L. Saenger
- et al.
- 2005
- IEEE Electron Device Letters
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.