Silicon-on-insulator MOSFETs with hybrid crystal orientations

Abstract

Novel silicon-on-insulator (SOI) structures are presented on hybrid orientation substrates (SuperHOT), i.e. with nFETs on (100) surface orientation and pFETs on (110) orientation, using silicon lateral overgrowth. Functional SOI MOSFETs and ring oscillators are demonstrated. © 2006 IEEE.