Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

Abstract

High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/μm and 1.25mA/μm, and I eff of 0.95mA/μm and 0.70mA/μm at I off =100nA/μm and V DD of 1V, for NFET and PFET, respectively. © 2012 IEEE.