Scalability of extremely thin SOI (ETSOI) MOSFETs to sub-20-nm gate length
- Ali Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- IEEE Electron Device Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
6 results for Raghavasimhan Sreenivasan
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
- A. Khakifirooz
- R. Sreenivasan
- et al.
- 2013
- S3S 2013
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
- A. Khakifirooz
- Kangguo Cheng
- et al.
- 2012
- VLSI Technology 2012
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Technology 2011
ETSOI CMOS for system-on-chip applications featuring 22nm gate length, sub-100nm gate pitch, and 0.08μm2 SRAM cell
- Kangguo Cheng
- A. Khakifirooz
- et al.
- 2011
- VLSI Circuits 2011
Impact of back bias on ultra-thin body and BOX (UTBB) devices
- Q. Liu
- Frederic Monsieur
- et al.
- 2011
- VLSI Technology 2011