Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes

Abstract

In this work, we present and review a physics-based statistical model recently developed for our experimental findings of the reverse BD area scaling using hydrogen-plasma-treated HfO2 ReRAM devices, demonstrating no fundamental reason preventing the old scaling law from being reversed or altered, thus providing a solution for ReRAM technology scaling.