Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and BeyondRuqiang BaoYusuke Onikiet al.2024IEDM 2024
Monolithic Stacked FET with Stepped Channels for Future Logic TechnologiesChen ZhangSeungmin Songet al.2024IEDM 2024
Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processesErnest Y WuTakashi Andoet al.2023IEDM 2023