Enabling Next Generation CMOS by Novel EOT Scaling Module

Abstract

A new integrated-process approach is introduced enabling precision control and co-optimization of advanced gate stacks delivering 1-2Å EOT scaling while maintaining same gate leakage level compared to a traditional flow. We demonstrated this Tinv oxide integrated scaling on advanced FinFET test vehicles and show > 8% Ion/Ioff gain for SiGe Fin PFET / Si Fin NFET, and similar benefits are preliminarily observed on Nano-Sheet (NS) devices. This paves the way for current and next generation CMOS devices for scaling and performance improvement.