An asymmetrical double-gate VCO with wide frequency range
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
In this letter, the random dopant fluctuation effect in ultrathin-body (UTB) fully depleted/silicon-on-insulator (FD/SOI) devices is analyzed. We show that due to larger variability and asymmetry in threshold voltage Vt distribution, it will be difficult to use UTB FD/ SOI devices for sub-50-nm static random access memory (SRAM) design. Using thinner buried oxide (BOX) FD/SOI devices, the asymmetry in the Vt spread can be reduced. We present a viable concept of FD/ SOI SRAM and predict that a thin-BOX device is the optimal FD/SOI structure for SRAM in sub-50-nm technology nodes. © 2006 IEEE.
Hung Ngo, Keunwoo Kim, et al.
VLSI-TSA 2006
Jie Deng, Keunwoo Kim, et al.
IEEE Transactions on Electron Devices
Jae-Joon Kim, Keunwoo Kim, et al.
ESSCIRC 2006
Rajiv V. Joshi, Richard Q. Williams, et al.
ESSDERC/ESSCIRC 2004