Keunwoo Kim, Jente B. Kuang, et al.
IEEE International SOI Conference 2008
In this letter, the random dopant fluctuation effect in ultrathin-body (UTB) fully depleted/silicon-on-insulator (FD/SOI) devices is analyzed. We show that due to larger variability and asymmetry in threshold voltage Vt distribution, it will be difficult to use UTB FD/ SOI devices for sub-50-nm static random access memory (SRAM) design. Using thinner buried oxide (BOX) FD/SOI devices, the asymmetry in the Vt spread can be reduced. We present a viable concept of FD/ SOI SRAM and predict that a thin-BOX device is the optimal FD/SOI structure for SRAM in sub-50-nm technology nodes. © 2006 IEEE.
Keunwoo Kim, Jente B. Kuang, et al.
IEEE International SOI Conference 2008
Subho Chatterjee, Minki Cho, et al.
SEMI-THERM 2012
Saibal Mukhopadhyay, Rajiv V. Joshi, et al.
ISQED 2008
Niladri Narayan Mojumder, Saibal Mukhopadhyay, et al.
IEEE Transactions on VLSI Systems