I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study. © 2011 Elsevier Ltd. All rights reserved.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering