Discrete dopant fluctuation in limited-width FinFETs for VLSI circuit application: A theoretical study

Abstract

The random dopant fluctuation (RDF) in double-gate (DG) devices is investigated via physical analyses and numerical simulations. Our results show that extremely scaled devices, especially FinFETs with narrow device width (fin height) in each individual fin, are susceptible to RDF effects. Even in an updoped silicon channel, the existence of unwanted impurity dopant will still have a significant impact on device characteristics. Design implication from RDF is also discussed. © 2006 IEEE.