PaperOutdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAsH. Baratte, D.K. Sadana, et al.Journal of Applied Physics
Conference paperElectrical integrity of state-of-the-art 0.13 μm SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabricationK.W. Guarini, A. Topol, et al.IEDM 2002