Ion implantation in gallium arsenide mesfet technology
J.P. De Souza, D.K. Sadana
Congress of the Brazilian Society of Microelectronics 1990
The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2) rapid thermal annealing (RTA) at 900-1000°C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (<0.1 μm) and/or the Be+ dose is high (>1×1015 cm-2). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm-2) Be-implanted sample that underwent capless RTA at 1000°C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a >900°C/2 s RTA is electrically active.
J.P. De Souza, D.K. Sadana
Congress of the Brazilian Society of Microelectronics 1990
J.P. De Souza, E.W. Kiewra, et al.
Applied Physics Letters
A.C. Callegari, D.K. Sadana, et al.
Applied Physics Letters
I. Danilov, H. Boudinov, et al.
Journal of Applied Physics