PaperAccumulation capacitance for GaAs-SiO2 interfaces with Si interlayersJ. Freeouf, D.A. Buchanan, et al.Applied Physics Letters
PaperPhotoinduced hydrogen loss from porous siliconR.T. Collins, M.A. Tischler, et al.Applied Physics Letters
PaperImproved Schottky gate characteristics for MOVPE-grown GaAs MESFETsM.A. Tischler, D.C. Latulipe, et al.Journal of Crystal Growth
PaperProperties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAsA.C. Callegari, D.K. Sadana, et al.Applied Physics Letters
