Hole transport in nanoscale p-type MOSFET SOI devices with high strain

Abstract

In this paper, we quantify the relation of low lateral electric field hole mobility and channel strain to the virtual source velocity of nanoscale ptype SOI MOSFET devices with effective channel length from 35 to 50 nm and show strong correlation. The mobility is modified by the application of uniaxial compressive strain in the 1 GPa regime to the channel by employing two stressors- (1) embedded SiGe (eSiGe) at the source/drain areas and (2) compressive strain silicon nitride contact liner film. The corresponding changes in low-field mobility and saturation drain current are significant. © 2007 IEEE.