R.W. McGowan, D. Grischkowsky, et al.
Applied Physics Letters
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
R.W. McGowan, D. Grischkowsky, et al.
Applied Physics Letters
J. Misewich, A.G. Schrott
MRS Proceedings 2000
J.S. Washington, E. Joseph, et al.
MRS Spring Meeting 2009
A.G. Schrott, J. Misewich, et al.
Applied Physics Letters