Fabrication of metal gated FinFETs through complete gate silicidation with Ni

Abstract

Metal-gate FinFETs were fabricated using complete gate silicidation with Ni, combining the advantages of metal-gate and double-gate transistors. NiSi-gate workfunction control is demonstrated using silicide induced impurity segregation of As, P, and B over a range of 400 mV. High device performance is achieved by integrating the NiSi metal gate with an epitaxial raised source/drain, silicided separately with CoSi 2. Process considerations for this dual silicide integration scheme are discussed. Poly-Si gated FinFETs are also fabricated and used as references for workfunction and transconductance. © 2004 IEEE.