Moore's law lives on

Abstract

Ideally, a metal-oxide-semiconductor field-effect transistor (MOSFET) has high drive current and low leakage current. As the MOSFET channel length is reduced to 50 nm and below, the suppression of off-state leakage current becomes an increasingly difficult technological challenge-one that will ultimately limit the scalability of the conventional MOSFET structure. This paper reviews recent research performed at the University of California at Berkeley on advanced transistor structures that can extend the limit of device scaling to below 10 nm for future generations of MOS technology.