On the scalability and carrier transport of advanced CMOS devices

Abstract

Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We will discuss recent progress in advanced gate stack, ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon hybrid orientation technology, and Ge FET. © 2005 IEEE.