Swagath Venkataramani, Jungwook Choi, et al.
IEEE Micro
Conventional scaling is no longer effective to continue device performance trend because of technological difficulties in the scaling of key device parameters. In this paper, we discuss device scaling options beyond convention device structures. We will discuss recent progress in advanced gate stack, ultrathin body silicon on insulator (UTSOI) MOSFET and FinFET structures for improved electrostatic. We also discuss various mobility enhancement techniques including strained silicon hybrid orientation technology, and Ge FET. © 2005 IEEE.
Swagath Venkataramani, Jungwook Choi, et al.
IEEE Micro
Qiqing Ouyang, Min Yang, et al.
VLSI Technology 2005
Suyoung Bang, Jae-Sun Seo, et al.
IEEE JSSC
Sae Kyu Lee, Ankur Agrawal, et al.
IEEE JSSC