M.I. Nathan, W.P. Dumke, et al.
Applied Physics Letters
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
M.I. Nathan, W.P. Dumke, et al.
Applied Physics Letters
P.M. Mooney, J.L. Jordan-Sweet, et al.
Physica B: Condensed Matter
J.C. Tsang, F.H. Dacol, et al.
Applied Physics Letters
T. Foster, D.K. Maude, et al.
Physica Scripta