T.N. Theis, T.F. Keuch, et al.
Gallium Arsenide and Related Compounds 1984
DX centers are found to cause the capacitance of an AlGaAs/GaAs p-n heterojunction at 77 K to behave like that of a p-i-n diode. Exposure to light causes the capacitance to behave like a normal p-n junction. It is argued that the presence of DX centers has only a small effect on the switching properties heterojunction bipolar transistors.
T.N. Theis, T.F. Keuch, et al.
Gallium Arsenide and Related Compounds 1984
K. Beyzavi, K. Lee, et al.
Applied Physics Letters
Huiling Shang, E. Gousev, et al.
ICSICT 2004
S.J. Koester, R. Hammond, et al.
EDMO 1999