Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
IEEE T-ED
Paper
01 Jan 1985
VA-6 Temperature-Dependent Properties of the Double HBJT
View publication
Abstract
No abstract available.
Related
Paper
Magnetic hysteresis in integrated low T
c
SQUID gradiometers
Paper
Accumulation capacitance for GaAs-SiO
2
interfaces with Si interlayers
Conference paper
THRESHOLD CHARACTERISTICS OF MUTUALLY COUPLED SQUIDS.
Paper
Energy band-gap discontinuities in GaAs:(Al,Ga)As heterojunctions
View all publications