Static frequency divider circuit using 0.15 μm gate length Si_0.2Ge_0.8/Si_0.7Ge_0.3 p-MODFETs

Abstract

The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.