Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge

Abstract

High-resolution triple-axis x-ray diffraction measurements were used to study strain relaxation in the individual layers of a SiGe/Si structure step-graded to pure Ge. The tilt of each layer is explained by extending the model previously proposed for obtaining the nucleation activation energy of dislocations to account for the reduced miscut of the growth surface as the sample relaxes and the variation in the materials properties with alloy composition. © 1994 American Institute of Physics.