Alan C. Warren, J. Woodall, et al.
IEE/LEOS Summer Topical Meetings 1991
We describe current-voltage measurements on superconducting Nb/InGaAs junction field-effect transistors which reveal a crossover from tunneling-dominated to Andreev scattering-dominated transport at the superconductor-semiconductor contacts as Schottky barrier thickness decreases with increasing interfacial dopant concentration. These measurements are the first demonstration of such a crossover in a thin-film structure, and are of interest for investigations of hybrid superconductor-semiconductor devices, proximity effect boundary conditions, and transport in ohmic contacts to semiconductors.
Alan C. Warren, J. Woodall, et al.
IEE/LEOS Summer Topical Meetings 1991
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983
J.R. Kirtley, C.D. Tesche, et al.
Physical Review Letters
R.L. Sandstrom, A.W. Kleinsasser, et al.
IEEE Transactions on Magnetics